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Category
- Fabrication and Processing » Nanofabrication
- Fabrication and Processing » Nanofabrication
Booking Details
Facility Management Team and Location
Facility Features, Working Principle and Specifications
Facility Description
The rapid thermal processor has the capability to run the following processes (a) Rapid thermal annealing of compound semiconductors (b) Rapid Thermal Oxidation (RTO) (c) Rapid Thermal Nitridation (RTN)
Temperature range: RT to 900°C
Max Ramp Rate 150°C/s (for Si) 40°C/s (for Susceptor)
Max. Safe Ramp Rate (for Si processing) - 100°C/s
Max. Safe Ramp Rate (for III-V processing using Graphite Susceptor) - 25°C/s
Vacuum range: Atmosphere approx to 1 mBar
Instructions for Registration, Sample Preparation, User Instructions and Precautionary Measures
https://www.iitbnf.iitb.ac.in/iitbnf/operation/lab-access-procedure.php
Charges for Analytical Services in Different Categories
In progress
Applications
RTA (Rapid Thermal Annealing RTO (Rapid Thermal Oxidation) Diffusion
Compound semiconductor annealing Nitridation, Silicidation Crystallization and Densification
Sample Details
Si
Ar, N2, O2
2 inch Si
NA
Na and K not allowed, metals not allowed