Category
- Microscopy and Imaging » Electron Microscopy
Booking Details
TEM Bright field/dark field imaging, HR-TEM imaging,Diffraction pattern
Energy Dispersive spectroscopy (EDS)
Electron Energy Loss spectroscopy (EELS)
Facility Management Team and Location
Prof. Suparna Mukherji
head.saif@iitb.ac.in
office.saif@iitb.ac.in
0091-22- 2576 7691/2
Dr. Bharati Patro
bharati@iitb.ac.in
Dr. Mayuri Gandhi, Research Scientist, SAIF
Dr. Gajender Saini, Senior Technical Officer, SAIF
Mr. A. Naresh, Senior Technical Officer, SAIF
Dr. Nutan Agadi, Technical Officer, SAIF
Dr. Bharati Patro, Technical Officer
Facility Features, Working Principle and Specifications
Features:
Resolution: Point : 2.0 Angstrom
Line : 1.0 Angstrom
Accelerating Voltage: 300 kV
Magnification Range: 58 x to 1 Million x
Accessories
• EDS : EDAX with Octane ELITE T Super
• STEM : on axis BF/DF & HAADF detector
• EELS with GIF (Gatan Image Filter)
Working Principle:
Transmission Electron Microscopy (TEM) is a technique in which a beam of high energy electrons is transmitted through a very thin specimen to form an image which reveals the information about morphology and crystallography. FEG-TEM can go upto atomic scale resolution to view the atomic arrangement of the material.
Scanning Transmission Electron Microscopy (STEM) in which the electron beam is focused to a fine spot to scan in the raster pattern across the specimen and is suitable for analytical techniques such as Z-contrast, annular dark-field imaging, and spectroscopic mapping for chemical composition by Energy Dispersive Spectroscopy (EDS) and as well as Electron Energy Loss Spectroscopy (EELS). These signals can be obtained simultaneously, allowing direct correlation of images and spectroscopic data.
TEM Bright field/dark field imaging, HR-TEM imaging,Diffraction pattern
Energy Dispersive spectroscopy (EDS)
Electron Energy Loss spectroscopy (EELS)
Instructions for Registration, Sample Preparation, User Instructions, Precautionary Measures and Charges
External Users (other than IIT Bombay):
1. A requisition letter addressed to Head, SAIF along with a printout of electronic fund transfer (NEFT) proof should be sent by post or submitted in person to SAIF office, IIT Bombay, Powai, Mumbai-400076.
2. Once your requisition letter along with the payment proof is received by the SAIF office, your appointment will be scheduled as per the queue.
3. The user will be informed about the appointment date and time by e-mail.
4. The sample can be loaded on a carbon coated copper grid or can be made in disc form, 3mm diameter, with a thinned (electron transparency) central area.
5. It is desirable that the user is present in the TEM lab at the time of the appointment for better utilization of the facility.
6. Before proceeding further, please review How to Use Facility and Payment Procedure for more information.
Internal (IIT Bombay) Users:
1. The user should register online.
2. An appointment will be given as per the queue and the user will be informed by an email.
3. The new user is requested to contact 300kV FEG-TEM Lab before registration.
- The user has to collect TEM grids from the 300kV FEG TEM lab.
- The user has to come for analysis with a prepared sample on the TEM grid.
- The samples should be prepared on TEM grids of 3mm size and sample thickness should be 50- 100 nm for analysis.
- Any query related to your 300kV FEG-TEM analysis can be emailed to fegtem300@iitb.ac.in.
- The samples should be dry and should withstand ultra-high vacuum
We prefer you or your representative who knows and understands the sample should be present on the day of appointment.
Sample preparation if any should be done at the user end only.
The samples should be dry and should withstand ultra-high vacuum.
For registration related information:
http://www.saif.iitb.ac.in/Docs/External%20User%20Request%20Registration%20Process.pd
HR-TEM 300 kV Samplewise format, Charges without GST:
| Industry | University | National Lab/R&D's | IIT Bombay Users | ||
| Imaging | 12000/- | 3000/- | 6000/- | 1500/- | Per Sample |
| EDS (Spectrum only) | 7200/- | 1800/- | 3600/- | 900/- | Per Area |
| EDS (Spectrum + image) | 9600/- | 2400/- | 4800/- | 1200/- | Per EDS analysis |
| Mapping | 9600/- | 2400/- | 4800/- | 1200/- | Per EDS map |
| Line Scan | 9600/- | 2400/- | 4800/- | 1200/- | Per EDS Line scan |
| EELS | 18000/- | 4500/- | 9000/- | 2250/- | Per EELS analysis |
Applications
- Nano science/Nano Technology
- Micro/Nano electronics
- Thin Films
- Catalysis
- Corrosion
- Polymer science
- Energy science/Engg.
- biological and life sciences
Sample Details
Biological/Polymer/Metal/Thin film/Ceramic or Composite material/Nano particles or Nano materials/
Biological/Polymer/Metal/Thin film/Ceramic or Composite material/Nano particles or Nano materials/
Biological/Polymer/Metal/Thin film/Ceramic or Composite material/Nano particles or Nano materials/
Biological/Polymer/Metal/Thin film/Ceramic or Composite material/Nano particles or Nano materials/
If samples are not dried, column vacuum gets contaminated
Sample thickness should be less than 100 nm for TEM / HR-TEM / Diffraction Imaging and STEM-EDS analysis.
For EELS analysis sample thickness is expected to be around 50 nm