In an ICP (Inductively Coupled Plasma) system, a coil surrounding the process chamber operates at 13.56 MHz to generate an electromagnetic field that ionizes the process gases through inductive coupling, creating a high-density plasma with reactive species necessary for chemical etching. A separate RF power, typically at 2.56 MHz, is applied to the wafer chuck (table) to accelerate ions from the plasma toward the wafer surface, ensuring directional ion bombardment and achieving anisotropic etching profiles. The wafer is held securely during the process using an electrostatic chuck (ESC) to provide stable clamping throughout the etch.